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Innovative Technologies Supporting Affordable Increases in Power, Efficiency, and Bandwidth for Ballistic Missile Defense System (BMDS) X-Band Radars

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-06-C-7512
Agency Tracking Number: B064-012-0063
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA06-T012
Solicitation Number: N/A
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-08-24
Award End Date (Contract End Date): 2007-02-24
Small Business Information
1600 Adams Drive Suite 112
Menlo Park, CA 94025
United States
DUNS: 142306666
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Felix Ejeckam
 (650) 688-5760
Business Contact
 Felix Ejeckam
Title: CEO
Phone: (650) 688-5760
Research Institution
 Lester F Eastman
425 Philips Hall, Cornell Univ
Ithaca, NY 14853
United States

 (607) 255-4369
 Nonprofit College or University

This Phase-I STTR MDA Proposal proposes the use of a new class of diamond-seeded solid-state material system for the manufacture of virtually all heat-generating solid-state electronics in X-band and Ballistic Missile Defense radar components and systems. In this proposal wherein much preliminary (DARPA- and MDA-funded) work has been demonstrated hitherto by the authors, all or most of the basic semiconductor devices in an electronic RF unit (e.g. GaN HEMTs, Power Amplifiers, etc.) are replaced with Semiconductor-on-Diamond based devices to enable nearly total and immediate heat extraction from the device’s active region. A 4” Gallium Nitride-on-Diamond will be demonstrated for the first time here. Polycrystalline free standing CVD diamond – nature’s most efficient thermal conductor – enables nearly perfect heat extraction from a “hot” device, owing to the extreme thermal conductivity of diamond (GaAs, Si, and SiC are 35W/m/K, 150W/m/K and 390W/m/K respectively; diamond ranges from 1200-2000 W/m/K depending on quality). In the proposed scheme, the device’s active epitaxial layers are removed from their original host substrate and transferred to a specially treated low-cost CVD diamond substrate using a proprietary low-cost manufacturable scheme. The semiconductor-on-diamond technology proposed here may be applied to Si, GaAs, GaN, SiC, SiGe, etc. at up to 8” in wafer diameter.

* Information listed above is at the time of submission. *

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