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Innovative Technologies Supporting Affordable Increases in Power, Efficiency, and Bandwidth for Ballistic Missile Defense System (BMDS) X-Band Radars

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-07-C-7654
Agency Tracking Number: B064-012-0063
Amount: $1,000,000.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: MDA06-T012
Solicitation Number: N/A
Solicitation Year: 2006
Award Year: 2007
Award Start Date (Proposal Award Date): 2007-08-31
Award End Date (Contract End Date): 2009-08-31
Small Business Information
1600 Adams Drive Suite 112
Menlo Park, CA 94025
United States
DUNS: 142306666
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Felix Ejeckam
 (408) 887-6682
Business Contact
 Felix Ejeckam
Title: PI
Phone: (408) 887-6682
Research Institution
 Lester Eastman
425 Phillips Hall
Ithaca, NY 14850
United States

 (607) 255-4369
 Nonprofit College or University

This Phase-II STTR proposal proposes the use of a new class of diamond-seeded solid-state material system for the manufacture of virtually all packaged intense heat-generating solid-state electronics in X-band and Ballistic Missile Defense radar components and systems. In this proposal wherein much preliminary (also MDA-funded) work has been demonstrated hitherto by the authors, Gallium Nitride-on-SiC power amplifiers in X-band radar are replaced with GaN-on-Diamond power amplifiers to enable nearly total and immediate heat extraction from the device¡¦s active region. This proposal is focused on producing up to 400ƒYm thick 2¡" GaN-on-Diamond FET wafers, as well as 5 W/mm GaN-on-Diamond FET devices. Polycrystalline free standing CVD diamond ¡V nature¡¦s most efficient thermal conductor ¡V enables nearly perfect heat extraction from a ¡hot¡" device, owing to the extreme thermal conductivity of diamond (GaAs, Si, and SiC are 35-, 150- and 390-W/m/K respectively; diamond is 1200-2000 W/m/K per quality). In the proposed scheme, the device¡¦s active epitaxial layers are removed from their original host substrate and transferred to a specially treated low-cost CVD diamond substrate using a proprietary low-cost manufacturable scheme. The semiconductor-on-diamond technology proposed here may be applied to GaAs, GaN, SiC etc. at up to 8¡" in wafer diameter.

* Information listed above is at the time of submission. *

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