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Investigation of Novel Wide Bandgap Oxide System for Visible and Solar Blind Ultra Violet Detectors

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: DTRA01-02-P-0160
Agency Tracking Number: 02-0868
Amount: $70,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
6208 Three Apple Downs
Columbia, MD 21045
United States
DUNS: 100670954
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 R. Vispute
 CEO & CTO
 (410) 312-2999
 rd@bluewavesemi.com
Business Contact
 Archana Vispute
Title: Administrator
Phone: (410) 312-2999
Email: rd@bluewavesemi.com
Research Institution
N/A
Abstract

"This Small Business Innovation Research Phase I Project proposes to develop innovative visible and solar blind UV detectors based on a novel metal-oxide system that is analogous to GaAlN with the potential advantage of having a larger band gap (7.9 eV)than AlN (6.2 eV). It is based on a wide band gap oxide system which is realized by alloying two primary oxide compounds, exhibits a wider and tunable band gap, creating semiconductor materials which have energy gaps from 3.3 eV to 7.9 eV with highradiation hardness. The idea of making and applying tunable band gap oxides for UV detectors is already patented by PI through the University of Maryland. Though the concept and initial ideas are patented, a feasibility study on comparison of the materialsand devices with that of the other semiconductors including GaAlN and their devices is necessary for commercialization of the oxide based technology. To achieve this goal, a significant amount of work is needed in terms of R&D and comparative studies onthe optoelectronic properties of oxide materials and devices. In Phase I, we will demonstrate the core of the feasibility of the material technology. In Phase II, we will extend this technology to produce large format detector arrays and test forreliability. Phase II will expand the potential of the material candidate for the fabrication of cost effective devices and then focus on manufacturing scale-up requirements in anticipation of a Phase

* Information listed above is at the time of submission. *

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