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Low-Cost GaN Substrates

Award Information
Agency: Department of Energy
Branch: ARPA-E
Contract: DE-AR0000443
Agency Tracking Number: 0941-1509
Amount: $225,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: DE-FOA-0000941
Timeline
Solicitation Year: 2013
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-02-17
Award End Date (Contract End Date): 2015-02-16
Small Business Information
6500 Kaiser Drive
Fremont, CA 94555-
United States
DUNS: 809425742
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Mark D'Evelyn
 (805) 683-1800
Business Contact
 Douglas Devine
Research Institution
N/A
Abstract

Soraa will develop a cost-effective technique to manufacture high-quality, high-performance gallium nitride (GaN) crystal substrates that are better than today’s GaN crystal substrates, which are expensive and prone to defects. Soraa will also develop pathways to large-area GaN substrates that can handle power switch applications. Substrates are thin wafers of semiconducting material needed for power devices like transistors and integrated circuits. If successful, Soraa will produce GaN crystal substrates that have 100 times fewer defects than conventional GaN substrates, cost eight times less, and are three to four times larger in diameter.

* Information listed above is at the time of submission. *

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