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Low Cost Visible Blind Ultra Violet Photodetectors on Glass and Polyimide

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 0215175
Amount: $99,993.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
6208 Three Apple Downs
Columbia, MD 21045
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ratnakar Vispute
 (410) 312-2999
 rd@bluewavesemi.com
Business Contact
Phone: () -
Research Institution
N/A
Abstract

This Small Business Innovation Research (SBIR) Phase I project proposes to develop innovative visible blind UV detectors based on a novel metal-oxide system that is analogous to Gallium Aluminum Nitride (GaN). It is based on a wide band gap oxide system that is realized by alloying two primary oxide compounds, exhibiting a wider and tunable band gap, creating semiconductor materials which have energy gaps from 3.3 eV to 7.9 eV with high radiation hardness. The project investigator has already patented the concept of making and applying tailorable band gap oxide materials. The goal of this proposal is to study the feasibility of growing wide band gap metal-oxides and ultraviolet detectors on low cost substrates such as glass, polyimide, and silicon for commercialization of cost effective products.

This technology can be extended to produce large format detector arrays and which can improve their reliability. Other areas where GaN detectors can be used are in telecommunications, chemical sensing, and homeland security.

* Information listed above is at the time of submission. *

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