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Low-Dose Low-Energy SIMOX for Fully Depleted Silicon-on-Insulator (SOI)

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: N/A
Agency Tracking Number: 36470
Amount: $98,506.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
32A Cherry Hill Dr.
Danvers, MA 01923
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Maria Anc
 (508) 777-4247
Business Contact
Phone: () -
Research Institution

A program is proposed to investigate and develop thin buried oxide (BOX) SIMOX with quality of silicon and BOX layers suitable to support fully depleted SOI applications with minimum feature size at and below 0.18 um. In Phase I, novel, low dose SIMOX processes in low energy (less than 100keV) regime will be examined. This approach will allow to tailor thin film layer thicknesses by proper choice of implant parameters, employment of the Ibis 1000 implanter with independent temperature and beam current control will allow to achieve low dislocation density silicon layer, and extreme anneal conditions will be used to achieve the best characteristics of silicon and BOX layers. The thrust of the proposed work is to develop the new generation of low cost, high quality SIMOX with improved reproducibility and reliability for advanced commercial and rad hard microelectronics.

* Information listed above is at the time of submission. *

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