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Production Friendly GaN Coatings Using RECVD, a New CVD Method

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 35866
Amount: $60,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1997
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
430 Tenth Street, N.w., Suite N-108
Atlanta, GA 30318
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrew T. Hunt, Ph. D.
 (404) 874-6550
Business Contact
Phone: () -
Research Institution

Currently vacuum based methods of PVD and CVD are the only processes for forming GaN thin films and coatings. These methods are usually expensive and are not applied in a production friendly manner. An atmospheric deposition technique that inexpensively and easily applies GaN thin or thick films in an environmentally friendly manner is a priority for any number of DOD and commercial applications. Combustion chemical vapor deposition (CCVDsm), invented by the principal investigator and president of MicroCoating Technologies (MCT), is a low cost, high quality deposition technique that permits the deposition of many oxygen stable materials. CVD quality films of numerous materials have been produced via CCVD in the open atmosphere without a furnace or reaction chamber, but the process is generally limited to the deposition of oxides and noble metals. A new method, termed radiant energy chemical vapor deposition (RECVD) has been conceived that allows for the deposition of carbides, nitrides and elemental coatings in the open atmosphere. Conventional CVD uses expensive high vapor pressure precursors to deposit these materials. In contrast, RECVD, using MCT technology developed for CCVD processing, can utilize inexpensive, environmentally safe, precursors since the vapor pressure of the precursors is not a considerable concern. Low cost, production friendly RECVD will be demonstrated for the first time during Phase I. GaN will be thermodynamically studied for processing, and then the capability to deposit electronic grade GaN will be experimentally tested. This proposal will demonstrate the capability of inexpensively depositing epitaxial GaN thin films that cannot currently be deposited under ambient conditions Low cost, high quality epitaxial GaN coatings that can tie applied in a production friendly manner over large areas and irregular surfaces are desired for electrical applications. The possible commercial applications are almost as large as the thin film silicon field. Numerous companies have met with MCT and are excited about non-oxide CVD electronic coatings applied via our economical techniques.

* Information listed above is at the time of submission. *

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