Vertical GaN Substrates

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Materials will first focus on developing a high-quality GaN substrate and then on expanding the substrate’s size. If successful, SixPoint Materials will enable high-power GaN circuits that can convert power for electric motors and electric vehicles with half the energy loss compared to today’s GaN devices.