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Vertical GaN Substrates

Award Information
Agency: Department of Energy
Branch: ARPA-E
Contract: DE-AR0000445
Agency Tracking Number: 0941-1528
Amount: $1,500,000.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: DE-FOA-0000941
Solicitation Number: DE-FOA-0000941
Solicitation Year: 2013
Award Year: 2014
Award Start Date (Proposal Award Date): 2015-03-10
Award End Date (Contract End Date): 2017-03-09
Small Business Information
37 Industrial Way #106
Buellton, CA 93427-
United States
DUNS: 801196846
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Tadao Hashimoto
 (805) 686-3900
Business Contact
 Tadao Hashimoto
Research Institution
 University of Notre Dame
832 Grace Hall Research & Sponsored Programs
Notre Dame, IN 46556
United States

 Nonprofit College or University

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Materials will first focus on developing a high-quality GaN substrate and then on expanding the substrate’s size. If successful, SixPoint Materials will enable high-power GaN circuits that can convert power for electric motors and electric vehicles with half the energy loss compared to today’s GaN devices.

* Information listed above is at the time of submission. *

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