AlInN/GaN HFET over Free-Standing bulk GaN substrates

SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN lattice-matched structure will reduce the defects density by 2-3 orders of magnitude, resulting in RF devices with high reliability. Furthermore, it will lead to an increased electron concentration at the heterointerface, making the depletion extensions shorter and thus improving the cut-off frequency power trade off.