You are here

AlInN/GaN HFET over Free-Standing bulk GaN substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-10-C-7402
Agency Tracking Number: B09B-001-0056
Amount: $99,963.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA09-T001
Solicitation Number: 2009.B
Solicitation Year: 2009
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-05-03
Award End Date (Contract End Date): 2010-11-02
Small Business Information
1195 Atlas Road
Columbia, SC 29209
United States
DUNS: 135907686
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jinwei Yang
 Chief Scientist
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Research Institution
 Rensselaer Polytechnic Institute
 Michael Shur
110 8th Street
Troy, NY 12180
United States

 (518) 276-2201
 Nonprofit College or University

SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN lattice-matched structure will reduce the defects density by 2-3 orders of magnitude, resulting in RF devices with high reliability. Furthermore, it will lead to an increased electron concentration at the heterointerface, making the depletion extensions shorter and thus improving the cut-off frequency power trade off.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government