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Contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) of GaN substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-10-C-7396
Agency Tracking Number: B09B-001-0065
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA09-T001
Solicitation Number: 2009.B
Timeline
Solicitation Year: 2009
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-05-03
Award End Date (Contract End Date): 2010-11-02
Small Business Information
2153 Hawthorne Road GTEC Center, Suite 129, Box2
Gainesville, FL 32641
United States
DUNS: 024935517
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Rajiv Singh
 Professor of Mat. Sc. & Eng.
 (352) 246-7420
 rsing@mse.ufl.edu
Business Contact
 Deepika Singh
Title: President and CEO
Phone: (352) 334-7237
Email: singh@sinmat.com
Research Institution
 University of Florida
 Rajiv K Singh
 
Material Science & Engineering PO Box 116400
Gainesville, FL 32611
United States

 (352) 246-7420
 Nonprofit college or university
Abstract

Gallium Nitride (GaN) substrates are ideal materials for fabrication of high-power and high-frequency devices based on III-V materials. The current state-of-the-art Chemical Mechanical Polishing (CMP) methods are plagued by several challenges, including, surface charge affects due to surface contamination, and sub-surface damages, which can limit the quality of III-V devices. Furthermore, there is a need to enhance polishing rates to increase throughput and decrease manufacturing costs. Sinmat Inc., in collaboration with University of Florida proposes to develop a surface contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) process for the production of epi-ready GaN substrates. This process also facilitates removal of surface/ sub-surface damage that can be detrimental to epitaxial growth. In Phase I we plan to demonstrate the feasibility of this RCMP process for polishing GaN substrates, whereas in Phase II high performance electronic devices will be fabricated on such GaN substrates.

* Information listed above is at the time of submission. *

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