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III-nitride 1.5 Micron Photonic Devices on Si Substrates

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-10-C-0073
Agency Tracking Number: A10A-015-0010
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: A10A-T015
Solicitation Number: 2010.A
Solicitation Year: 2010
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-09-29
Award End Date (Contract End Date): 2011-03-27
Small Business Information
4627 5th Street
Lubbock, TX 79416
United States
DUNS: 017213773
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jing Li
 R & D Director
 (806) 401-9289
Business Contact
 Jingyu Lin
Title: Co-Founder
Phone: (806) 441-4570
Research Institution
 Texas Tech University
 Kathleen Harris
Office of Research Services 203 Holden Hall
Lubbock, TX 79409
United States

 (806) 742-3884
 Nonprofit College or University

Research in silicon photonics has received much attention in recent years for its potential to utilize well developed silicon processing technology. A broad range of linear and nonlinear silicon photonic devices such as modulators, splitters, switches and detectors have been demonstrated. However, the most important challenge in silicon photonics thus far is the difficulty of making electrically pumped light sources and amplifiers. The objective of this project is to develop new types of optical emitters and amplifiers on silicon. The proposed approach is to utilize epitaxial growth of III-nitride semiconductors on Si substrate with in-situ erbium (Er) doping by metal-organic chemical vapor deposition (MOCVD). The approach is based on successful synthesizing of III-nitride UV/visible photonic structures on Si and Er-doped III-nitride photonic structures, achieved jointly by III-N Technology, Inc and Texas Tech University. These photonic structures predominantly exhibited the desired optical emission for optical communication at 1.5 micron. The technical aims are to (a) Further develop MOCVD growth technology for obtaining device quality InGaN on Si; (b) Optimize in-situ Er incorporation into III-nitride device structures; (c) Develop device fabrication technology for the realization of Er-doped nitride optical amplifiers and emitters active at 1.5 micron.

* Information listed above is at the time of submission. *

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