Modeling and Testing of RF/HPM Effects in a Voltage Controlled Oscillator

Military applications for the use of directed electromagnetic energy, which include high power microwave (HPM), seek to disrupt electronic systems by exploiting non-linearity in semiconductors. While current mode second breakdown is a thermal non-linearity often exploited, it has been demonstrated that a broad class of semiconductors have more subtle non-linearities that can be utilized to induce upset. For example, “designer waveforms” tailored to specific classes of semiconductors can induce sub-harmonics that can be particularly effective on digital timing circuits. Once induced, these sub-harmonics result in digital upset and it is necessary to recycle power to restore normal circuit operation. The proposed task is to demonstrate the feasibility of modeling the effects of RF/HPM fields on circuits containing Voltage Controlled Oscillators (VCOs). The Phase I task will incorporate and improve current models of the effects of electrical transients on VCOs as well as recent work on the development of a probabilistic electromagnetic coupling model. In addition tests will be carried out on representative VCO circuits in order to validate the model. The specialized waveforms developed during the Phase I and associated Phase II work will enable entirely new classes of missions for HPM and electronic warfare (EW) military applications. BENEFIT: The development of a modeling capability for HPM induced upset of Voltage Controlled Oscillators would have an immediate effect on the ability to predict upset of digital circuits. The resulting models would assist in the development of end-to-end HPM effects codes and the development of waveforms targeted at specific types of equipment. Commercial applications would include modeling of RF susceptibilities, support of EMC/EMI testing of digital equipment, and possible inclusion into design standards.