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High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

Award Information
Agency: Department of Commerce
Branch: National Institute of Standards and Technology
Contract: N/A
Agency Tracking Number: 09-105-5
Amount: $300,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2010
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
15985 NW Schendel Ave.
Beaverton, OR 97006
United States
DUNS: 124348652
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrew Huntington
 (971) 223-5646
Business Contact
Phone: () -
Research Institution

A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise equivalent power (NEP) performance. With all other aspects of the device shown to meet the requirements of optical quantum state tomography, in Phase II, standard planar processing will be used to fabricate the innovation, so that the bulk-InGaAs dominated performance limit of less than 500 pA of dark current can be achieved. Pairs of detectors matched for rise and decay time with less than 0.1% subtraction mismatch under optical excitation by femtosecond laser source will be packaged for use by NIST in homodyne measurements.

* Information listed above is at the time of submission. *

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