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A New MOCVD Platform for Commercially Scalable Growth of -Ga2O3 Device Structures

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-16-P-2058
Agency Tracking Number: N16A-023-0146
Amount: $79,957.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N16A-T023
Solicitation Number: 2016.0
Solicitation Year: 2016
Award Year: 2016
Award Start Date (Proposal Award Date): 2016-07-11
Award End Date (Contract End Date): 2017-05-10
Small Business Information
6595 Edenvale Blvd
Eden Prairie, MN 55346
United States
DUNS: 054898964
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrei Osinsky
 (952) 937-7505
Business Contact
 Ross Miller
Phone: (952) 937-7505
Research Institution
 University of California Santa Barbara
 Jim Speck
UC Santa Barbara \N
Santa Barbara, CA 93106
United States

 (805) 893-8005
 Nonprofit college or university

Future DoD and Navy missions require advances in current high voltage power electronics technology as existing technology and even recent promising advances in Silicon Carbide and Gallium Nitride based materials lack fundamental material properties to deliver switching capabilities needed for future high power converter applications, advanced radar and propulsion systems. Much interest has been recently directed towards the wide bandgap oxide semiconductor -Ga2O3 for potential application in these areas as it exhibits extraordinary material properties potentially suiting it for high voltage applications due to its ability to withstand very large electric fields. In this program a team of world renowned MOCVD and oxide semiconductor experts have been assembled to provide a comprehensive analysis through modeling, simulation and experimentation of the unique process for epitaxial growth of -Ga2O3 by MOCVD with the intent to refine and outline techniques for offering comprehensive p- and n-type doping control as well as high quality crystal growth rates of 2-4+ microns/hr.

* Information listed above is at the time of submission. *

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