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STTR Phase I: Low Cost, High Efficiency Photovoltaics

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 1010198
Agency Tracking Number: 1010198
Amount: $149,938.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MM
Solicitation Number: NSF 09-605
Solicitation Year: 2010
Award Year: 2010
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
1767-A Denver West Blvd.
Golden, CO 80401
United States
DUNS: 830703000
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Thomas Fanning
 (303) 376-6319
Business Contact
 Thomas Fanning
Title: PhD
Phone: (303) 376-6319
Research Institution
 University of Houston
 Thomas Fanning
4800 Calhoun Rd.
Houston, TX 77004
United States

 (303) 376-6319
 Nonprofit College or University

This Small Business Technology Transfer (STTR) Phase I project aims to develop roll-to-roll processing of highly efficient, thin film photovoltaics on inexpensive polycrystalline substrates. The innovation lies in an architecture that yields near-single-crystalline thin films even on polycrystalline substrates. This innovation will be combined with the benefits of hot wire chemical vapor deposition (HWCVD) for Si film deposition. A key objective of this project is to demonstrate a high-rate HWCVD process for epitaxial Si layer on single-crystalline-like templates to fabricate high-efficiency solar cells on metal substrates. A strong emphasis will be placed on minimizing sources of defects and developing a comprehensive understanding of the impacts of these parameters on structural, electronic and photovoltaic properties of epitaxial thin film heterostructures.
The broader/commercial impact of this project will be the potential to provide a viable solution that enables high efficiency and low manufacturing cost without using scarce materials in Photovoltaics devices. In addition to commercial potential, a strong understanding of the mechanisms of epitaxial growth, grain boundaries, and defect generation and propagation is expected to be derived from this work.

* Information listed above is at the time of submission. *

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