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Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelect
Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-16-M-1817
Agency Tracking Number: F16A-T28-0110
Amount:
$150,000.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
AF16-AT28
Solicitation Number:
2016.0
Timeline
Solicitation Year:
2016
Award Year:
2016
Award Start Date (Proposal Award Date):
2016-07-14
Award End Date (Contract End Date):
2017-04-14
Small Business Information
25 Tiana Place
Dix Hills, NY
11746
United States
DUNS:
877211664
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
Yes
Principal Investigator
Name: Jie Piao
Phone: (516) 508-0060
Email: jpeli23@gmail.com
Phone: (516) 508-0060
Email: jpeli23@gmail.com
Business Contact
Name: Jie Piao
Phone: (516) 508-0060
Email: jsdmh23@gmail.com
Phone: (516) 508-0060
Email: jsdmh23@gmail.com
Research Institution
Name: Dartmouse
Contact: Sherrie Read
Address:
Phone: (603) 646-3007
Type: Nonprofit College or University
Contact: Sherrie Read
Address:
11 Rope Ferry Road
#6210
Hanover, NH
03755
United States
Phone: (603) 646-3007
Type: Nonprofit College or University
Abstract
This proposal describes the development of a process to synthesize low defect Ge1-xSnx and SiyGe1-x-ySnx layers on silicon and silicon-on-insulator (SOI) substrates through low thermal budget excimer laser and rapid thermal annealing/crystallization for ...
* Information listed above is at the time of submission. *
