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Vertical GaN Substrates

Award Information
Agency: Department of Energy
Branch: ARPA-E
Contract: DE-AR0000445
Agency Tracking Number: 0941-1528
Amount: $800,000.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: DE-FOA-0000941
Solicitation Number: DE-FOA-0000941
Solicitation Year: 2013
Award Year: 2017
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
37 Industrial Way
Buellton, CA 93427
United States
DUNS: 801196846
HUBZone Owned: Unavailable
Woman Owned: Unavailable
Socially and Economically Disadvantaged: Unavailable
Principal Investigator
 Tadao Hashimoto
 (805) 686-3900
Business Contact
 Tadao  Hashimoto
Phone: (805) 686-3900
Research Institution
 Sandia National Laboratory
P.O. Box 5800
Albuquerque, NM 87185
United States

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 Federally Funded R&D Center (FFRDC)

SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Materials will first focus on developing a high-quality GaN substrate and then on expanding the substrate’s size. If successful, SixPoint Materials will enable high-power GaN circuits that can convert power for electric motors and electric vehicles with half the energy loss compared to today’s GaN devices.

* Information listed above is at the time of submission. *

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