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Next-Generation, Power-Electronics Materials for Naval Aviation Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-18-C-0333
Agency Tracking Number: N18A-004-0090
Amount: $125,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N18A-T004
Solicitation Number: 2018.0
Solicitation Year: 2018
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-04-25
Award End Date (Contract End Date): 2018-10-26
Small Business Information
37 Industrial Way, 106
Buellton, CA 93427
United States
DUNS: 801196846
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Tadao Hashimoto
 (805) 686-3900
Business Contact
 Tadao Hashimoto
Phone: (805) 686-3900
Research Institution
 University of California, Santa Bar
 Tadao Hashimoto
Materials Department
Santa Barbara, CA 93106
United States

 (805) 686-3900
 Nonprofit College or University

This STTR project develops an innovative seed fabrication technology to address the fundamental size-quality limitation of gallium nitride (GaN) substratesthe indispensable key component for GaN-based vertical high-power devices. Currently, there is no viable GaN technology to realize large-area and low-defect substrates simultaneously. The technology producing 6" and larger GaN wafers results in defect densities as high as 1e9 cm-2 whereas the technology achieving defect densities of 1e5 cm-2 or less can only provide 2" wafers. To solve this dilemma, SixPoint Materials and UC Santa Barbara will explore both a tiling method (lateral crystal fusing) and a layer transfer method, to develop high-quality 4" GaN engineered seed crystals suitable for SixPoint's proprietary near equilibrium ammonothermal (NEAT) method, which can achieve dislocation density of 2 x 1e5 cm-2 or less. The Phase I effort will focus on proof of concept with 10 x 20 mm seeds. During the Phase I option period, 2" engineered seeds will be achieved. By the end of Phase II, this project will achieve 4" GaN substrates with defect densities lower than 1e5 cm-2 and accelerate the wide adoption of vertical GaN power devices in both military and civil applications.

* Information listed above is at the time of submission. *

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