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Low-cost production of ultra-low defect GaN-based power electronics

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-18-C-0331
Agency Tracking Number: N18A-004-0170
Amount: $124,994.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N18A-T004
Solicitation Number: 2018.0
Solicitation Year: 2018
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-04-25
Award End Date (Contract End Date): 2018-10-26
Small Business Information
7624 Executive Drive
Eden Prairie, MN 55344
United States
DUNS: 081060913
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Amir Dabiran
 (612) 386-3349
Business Contact
 Nick Dabiran
Phone: (612) 386-3349
Research Institution
 University of Central Florida
 Winston Schoenfeld
4000 Central Florida Blvd
Orlando, FL 32816
United States

 (407) 823-6898
 Nonprofit College or University

GaN power semiconductors offer a technological breakthrough for improving the performance of power electronics including power density, conversion efficiency, and reliability of power converters. These are the three most critical requirements for military, aerospace and many commercial applications. In this STTR program, Qrona Technologies will collaborate with the University of Central Florida to develop low-cost and high-yield thin-film deposition and wafer transfer technologies to fabricate ultra-low defect III-nitride device structures grown on bulk GaN substrates. The proposed process reclaims and reuses the high quality bulk GaN wafers to achieve low-cost production of reliable GaN power devices with higher performance than the current state-of-the-art for both the government and commercial applications. As a demonstration of the effectiveness of the proposed approach, high current Schottky diodes will be fabricated in the Phase-I and Phase-I Option projects.

* Information listed above is at the time of submission. *

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