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Orientation-patterned Semiconductor Crystals with Low Insertion Loss and High Resistance to Laser Damage

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-18-P-1703
Agency Tracking Number: F18A-016-0049
Amount: $149,850.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: AF18A-T016
Solicitation Number: 2018.0
Solicitation Year: 2018
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-07-30
Award End Date (Contract End Date): 2019-07-30
Small Business Information
20 New England Business Center
Andover, MA 01810
United States
DUNS: 073800062
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Douglas Bamford
 (925) 743-1110
Business Contact
 B. David Green
Phone: (978) 738-8146
Research Institution
 University of Maryland, Baltimore County
 Cameron McAdams
1000 Hilltop Circle
Baltimore, MD 21250
United States

 (410) 455-3187
 Nonprofit College or University

The Air Force needs tunable laser systems with high average power in the mid-infrared region of the spectrum for military applications including defense against heat-seeking missiles.Currently-fieldedlaser systems, based on nonlinear frequency conversion in periodically poled lithium niobate (PPLN), have limited optical power at wavelengths between 4 m and 5 m because of intrinsic absorption in the nonlinear optical material.Systems under development, based on orientation-patterned gallium arsenide (OP-GaAs), do not suffer from this transparency problem, but their output power is still limited by optical damage.PSI, in collaboration with its academic partner, University of Maryland, Baltimore County,and BAE Systems proposes to use a novel fabrication process to produce textured surfaces on OP-GaAs that have the low infrared reflectivity needed for defense applications, along with a higher laser damage threshold than with currently-available nonlinear optical crystals.During Phase I we will prove the feasibility of our approach by developing a wafer-scale process for producing the proposed low-reflectivity surface and making laser damage threshold measurements.During Phase II we will prove the practicality of our approach by fabricating OP-GaAs devices incorporating these design improvements and measuring their performance under high-average-power conditions.

* Information listed above is at the time of submission. *

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