Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelectronic Devices

latereThis proposal describes the development of a process to synthesize low defect Ge1-xSnx and SiyGe1-x-ySnx layers on silicon and silicon-on-insulator (SOI) substrates through low thermal budget laser and rapid thermal annealing/crystallization for high performance mid-wave infrared (MWIR) photo detectors and integrated Si-based optoelectronic devices. In phase I, we demonstrated synthesis of GeSn layers on Si and SOI substrates with Sn content larger than 10%., extended wavelength >2.5 micron. In phase II, we will optimize the process parameters to demonstrate device quality materials, and fabricate high performance IR emitters and IR detectors operating in the spectral range of 2-5 μm.