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Laser and Rapid-thermal Crystallization of Low-defect GeSn and SiGeSn Layers for High Performance Infrared Detectors and Integrated Si-based Optoelectronic Devices

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-18-C-1638
Agency Tracking Number: F16A-T28-0110
Amount: $750,000.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: AF16-AT28
Solicitation Number: 16.A
Solicitation Year: 2016
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-07-10
Award End Date (Contract End Date): 2020-07-10
Small Business Information
25 Tiana Place
Dix Hills, NY 11746
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jie Piao
 (516) 508-0060
Business Contact
 Jie Piao
Phone: (516) 508-0060
Research Institution
 Dartmouth College
 Sherrie Read Sherrie Read
11 Rope Ferry Road #6210
Hanover, NH 03755
United States

 (603) 646-9163
 Nonprofit College or University

latereThis proposal describes the development of a process to synthesize low defect Ge1-xSnx and SiyGe1-x-ySnx layers on silicon and silicon-on-insulator (SOI) substrates through low thermal budget laser and rapid thermal annealing/crystallization for high performance mid-wave infrared (MWIR) photo detectors and integrated Si-based optoelectronic devices. In phase I, we demonstrated synthesis of GeSn layers on Si and SOI substrates with Sn content larger than 10%., extended wavelength >2.5 micron. In phase II, we will optimize the process parameters to demonstrate device quality materials, and fabricate high performance IR emitters and IR detectors operating in the spectral range of 2-5 μm.

* Information listed above is at the time of submission. *

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