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Low-Defect GeSn and SiGeSn for Integrated High-Performance SWIR and MWIR Optoelectronics

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-18-C-1152
Agency Tracking Number: F16A-T28-0145
Amount: $749,993.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: AF16-AT28
Solicitation Number: 2016.0
Solicitation Year: 2016
Award Year: 2018
Award Start Date (Proposal Award Date): 2017-11-08
Award End Date (Contract End Date): 2020-02-11
Small Business Information
41 Aero Camino
Santa Barbara, CA 93117
United States
DUNS: 191741292
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Daniel Renner
 (805) 967-4900
Business Contact
 Milan Mashanovitch
Phone: (805) 967-4900
Research Institution
 Arizona State University
 Lindsey Bosak
660 South Mill Avenue
Tempe, CA 85287
United States

 (480) 965-7874
 Nonprofit College or University

Advanced imaging techniques and, novel intelligence, surveillance and reconnaissance (ISR) methods are of great interest to the U.S. Air Force and other Department of Defense (DoD) agencies, but associated high-costs of III-V and II-VI MWIR and SWIR materials prohibit their practical widespread deployment and integration with other optoelectronic devices. In this program, we intend to investigate the use of GeSn/SiGeSn materials for developing novel low cost imaging sensors and emitters, as well as the possibility of integrating these components into large photonic-electronic monolithic integrated circuits. Several processes will be evaluated to improve crystallinity of current SiGeSn structures. The goal is to produce low-defect high-quality thin films, whereby direct-gap semiconductor devices become possible across MWIR and SWIR wavelengths. These new materials will enable a new breed of highly integrated optoelectronic components, that will enable both high-performance and low-cost infrared systems for the U.S. Warfighter.

* Information listed above is at the time of submission. *

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