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Atomic Layer Deposition of Highly Conductive Metals

Award Information
Agency: Department of Defense
Branch: Army
Contract: W31P4Q-18-C-0113
Agency Tracking Number: A2-7308
Amount: $999,995.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: A17A-T001
Solicitation Number: 17.A
Solicitation Year: 2017
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-09-25
Award End Date (Contract End Date): 2020-09-25
Small Business Information
44 Hunt Street
Watertown, MA 02472
United States
DUNS: 073804411
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Harish Bhandari
 Senior Scientist
 (617) 668-6922
Business Contact
 Kanai Shah
Phone: (617) 668-6801
Research Institution
 Harvard University
 Denise Lentini Denise Lentini
1033 Massachusetts Avenue 5th floor
Cambridge, MA 02138
United States

 (617) 384-5909
 Nonprofit College or University

Novel photonic structures, such as periodic metal-dielectric photonic bandgap structures (MDPBG) have the potential to revolutionize the field of optical windows. The large mismatch in the permittivities of the metal and dielectric creates resonant tunneling, which allows for high transmission in regions where metals are typically opaque. This property makes MDPBGs very attractive for screening or filtering specific electromagnetic radiation. Despite the technology’s potential for wide range of applications, there remain significant problems in manufacturing these structures reliably and economically. A specific challenge is the deposition of metals on dielectric surfaces, where the metal layer is less than 10 nm thick but smooth, conformal, continuous and highly-conductive. RMD has addressed this issue by developing a unique atomic layer deposition(ALD) technique that will integrate a well-studied metal precursor chemistry with highly energetic reactant source in order to lower the percolation threshold for metal layers. In Phase II, RMD will demonstrate the ability to grow a multilayer metal/dielectric layers containing metal thickness of 10 nm or less using ALD technologies for all the layers. These layers will be demonstrated with good interfacial adhesion, morphology and designed to satisfy a specific spectral transmission.

* Information listed above is at the time of submission. *

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