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Epitaxial Technologies for Gallium Oxide Ultra High Voltage Power Electronics

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-18-C-0192
Agency Tracking Number: N16A-023-0146
Amount: $1,999,916.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: N16A-T023
Solicitation Number: 16.A
Solicitation Year: 2016
Award Year: 2018
Award Start Date (Proposal Award Date): 2018-01-12
Award End Date (Contract End Date): 2023-05-01
Small Business Information
6595 Edenvale Blvd Suite 180
Eden Prairie, MN 55346
United States
DUNS: 054898964
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Andrei Osinskky
 (952) 937-7505
Business Contact
 Daniel Groninger
Phone: (612) 406-9815
Research Institution
 University California Santa Barbara
 James Speck James Speck
Materials Department
Santa Barbara, CA 93106
United States

 (805) 893-8005
 Nonprofit College or University

xß-Ga2O3 has emerged as a potentially disruptive semiconductor with a predicted breakdown field of ~8 MV/cm which is more than twice the breakdown field for the incumbent wide bandgap semiconductors GaN and SiC. The availability of ß-Ga2O3 bulk substrates sets this material apart from other wide bandgap materials for power electronic applications. However, the challenge is to find suitable epitaxial film growth techniques that allows fast growth rates and reasonable p- and n-type doping. In Phase I, we used virtual reactor modeling to identify suitable precursors and reactor geometries for fast growth rates. Actual film growth using close coupled showerhead MOCVD was also conducted and ß-Ga2O3 thin film with growth rate up to 9.8 µm/hr was obtained. In Phase II, we will continue to build on our achievements in Phase I and study all aspects of ß-Ga2O3 MOCVD growth processes including precursor types, process dynamics, reactor designing and building. The final MOCVD reactor will incorporate in situ characterization tools and control software, and be capable of growing at a minimum 4 µm/hr. With this reactor, both thick (> 30µm), n-type Ga2O3 drift layers and n- or p-type doped device layers (< 100nm) can be achieved in the same growth run.

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