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STTR Phase I: Vertical Structure Thin Film Transistors for High Performance Displays and Internet of Things Devices

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 2014979
Agency Tracking Number: 2014979
Amount: $224,900.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: S
Solicitation Number: N/A
Timeline
Solicitation Year: 2019
Award Year: 2020
Award Start Date (Proposal Award Date): 2020-05-15
Award End Date (Contract End Date): 2021-04-30
Small Business Information
10755 Scripps Poway Parkway Ste 437
San Diego, CA 92131
United States
DUNS: 052234653
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Chong Lee
 (858) 414-2989
 chonglee@solsonaenterprise.com
Business Contact
 Chong Lee
Phone: (858) 414-2989
Email: chonglee@solsonaenterprise.com
Research Institution
 UNIVERSITY OF CALIFORNIA SAN DIEGO
 Kenji Nomura
 
9500 GILMAN MAIL CDE 0602
LA JOLLA, CA 92093
United States

 Nonprofit college or university
Abstract

The broader impact/commercial potential of this Small Business Technology Transfer (STTR) Phase I project is to improve the performance of flat panel displays of various form factors and sizes. One of the key subsystems of a flat panel display is a TFT (Thin Film Transistor) backplane that drives the pixels in the panel. There are increasing demands for improved resolution and frame rate in displays, posing significant challenges on the performance of the TFT backplane. The proposed STTR research will produce TFT devices that are several orders of magnitude faster using existing semiconductor materials. This technology will lead to more capable solutions for displays, printed electronics, and internet-of-things applications. This Small Business Technology Transfer (STTR) Phase I project develops a novel Thin Film Transistor (TFT) design for displays and other electronics that require transistors. Conventional TFT transistors switch current laterally and are difficult to reduce below micron-level sizes. The proposed research will produce TFT transistors that switch current vertically. The path length across which the switching occurs is much shorter in the vertical devices and therefore the switching happens faster and can carry more current than conventional designs. This project develops a vertical TFT using amorphous indium gallium zinc oxide semiconductors. The project will advance the development of a prototype vertical TFT. This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

* Information listed above is at the time of submission. *

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