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SBDUV APD/GPD detector arrays

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W911NF-19-C-0027
Agency Tracking Number: D18C-003-0035
Amount: $224,999.30
Phase: Phase I
Program: STTR
Solicitation Topic Code: ST18C-003
Solicitation Number: 18.C
Timeline
Solicitation Year: 2018
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-03-18
Award End Date (Contract End Date): 2020-01-17
Small Business Information
44 Hunt Street
Watertown, MA 02472
United States
DUNS: 073804411
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 James Christian
 Director, Instrument Research & Development
 (617) 668-6897
 jchristian@rmdinc.com
Business Contact
 Kanai Shah
Phone: (617) 668-6801
Email: kshah@rmdinc.com
Research Institution
 University of Virginia
 Stewart P. Craig Stewart P. Craig
 
351 McCormick Road
Charlotesville, VA 22904
United States

 (434) 924-4270
 Nonprofit college or university
Abstract

The goal of the research is to provide a solar-blind, deep-UV photo-detector array that can be used in instruments detecting chemical and biological agents, such as TAC-BIO II, using UV Raman and Fluorescence measurements. The overall approach is to develop a solid-state detector array that achieves the performance goals for QE (>70%), gain (>1E6), dark current (<0.1 nA), and size (64x64, =100 um pitch). In Phase-1, we investigate the use of silicon, and silicon-carbide devices, where the goal will be to fabricate single elements and characterize their performance. The Phase-2 effort will focus on the most promising technology of the Phase-1 effort, and the goal is to fabricate a 16x16 array of elements that meets the targeted performance specifications. The present technology is a silicon CCD or CMOS camera, with an optical filter to block solar light, which do not provide single-photon sensitivity without cooling. The challenge with silicon devices is extending the QE to the deep UV region, while minimizing the dark current. The challenge with devices fabricated in materials that exhibit a wider bandgap in silicon is developing a fabrication process that minimizes the defect density.

* Information listed above is at the time of submission. *

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