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High-Power, Ultra-low Noise, Heterogeneously Integrated Lasers

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W911NF19C0003
Agency Tracking Number: D2-2209
Amount: $999,997.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: A14A-T005
Solicitation Number: 14.A
Solicitation Year: 2014
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-01-25
Award End Date (Contract End Date): 2020-09-04
Small Business Information
3301 Velvet Valley Drive
West Friendship, MD 21794
United States
DUNS: 614146764
HUBZone Owned: No
Woman Owned: Yes
Socially and Economically Disadvantaged: No
Principal Investigator
 Paul A Morton
 C.E.O. and C.T.O.
 (443) 745-4779
Business Contact
 Paul Morton
Phone: (443) 745-4779
Research Institution
 University of California at Santa Barbara
 John E. Bowers John E. Bowers
Lagoon Rd
Santa Barbara, MD 93106
United States

 (805) 893-8447
 Nonprofit College or University

In this program, Morton Photonics (MP) and its STTR partner Professor John Bowers and his research group at the University of California at Santa Barbara (UCSB) will develop two truly disruptive integrated laser devices: (1) A broadly tunable integrated laser with ultra-low linewidth, ultra-low relative intensity noise (RIN), and high output power; the Integrated Coherent Tunable Laser (ICTL), which supports wavelength division multiplexing (WDM) for high capacity coherent communications systems and networks, and for high channel count sensor systems and RF Photonics systems. (2) A single wavelength, high-power, ultra-low noise (ULN) integrated laser based upon MPs record-breaking Hybrid Lasers that have demonstrated linewidths as low as 15 Hz with an output power of over 100 mW. The ULN Extended-Distributed Bragg Reflector (E-DBR) devices will support single channel systems, or arrays of E-DBR lasers when required, for use in high performance RF Photonic and sensor systems. The ICTL and E-DBR devices developed through this program will take advantage of CMOS foundry based Silicon Photonics and the tremendous cost and scaling advantages of silicon processing technology, leading to a high volume low cost devices and Photonic Integrated Circuits (PIC) devices including them, with low cost, size, weight and power (CSWaP).

* Information listed above is at the time of submission. *

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