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Dual-Mode, Extended Near-Infrared, Focal Plane Arrays Fabricated with CMOS Compatible GeSiSn Alloy Materials

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-19-C-0084
Agency Tracking Number: D2-2250
Amount: $1,499,932.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: SB162-010
Solicitation Number: 16.2
Timeline
Solicitation Year: 2016
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-07-09
Award End Date (Contract End Date): 2022-10-10
Small Business Information
41 Aero Camino
Santa Barbara, CA 93117
United States
DUNS: 191741292
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Daniel Renner
 VP - Business Development
 (806) 967-4900
 drenner@freedomphotonics.com
Business Contact
 Leif Johansson
Phone: (805) 967-4900
Email: info@freedomphotonics.com
Research Institution
N/A
Abstract

Freedom Photonics and its team partners propose to develop in this program a novel Focal Plane Array (FPA) based on Germanium Silicon Tin (GeSiSn) on Silicon technology, capable of detecting wavelengths in the Shortwave Infrared (SWIR) range, up to 2200 nm. The FPAs will be developed in PIN photodiode and Avalanche Photodiode (APD) configuratios. These FPAs have the potential of providing low cost, large size and high sensitivity sensors, thus offering a practical solution to the US military forces widespread need for next generation SWIR imaging systems. These FPAs also have commercial applications, supporting US industry, health care and agriculture, among many other areas.

* Information listed above is at the time of submission. *

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