You are here

Processes for Fabrication of Atomically Precise Strongly Correlated Materials

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: 140D0419C0096
Agency Tracking Number: D2-2288
Amount: $1,500,000.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: ST17C-002
Solicitation Number: 17.C
Solicitation Year: 2017
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-09-19
Award End Date (Contract End Date): 2022-11-19
Small Business Information
95 Brown Road M/S 1035, Suite 271
Ithaca, NY 14850
United States
DUNS: 079136589
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Kwame Amponsah
 CEO & Founder
 (607) 262-0515
Business Contact
 Kwame Amponsah
Phone: (607) 262-0515
Research Institution
 Cornell University
 Grace Xing Grace Xing
395 Pine Tree Rd Suite 330
Ithaca, NY 14850
United States

 (574) 621-0188
 Nonprofit College or University

Developing knowledge-driven nanoelectronics for military applications requires understanding the fundamental physics that governs the behavior of the underlying material. Strongly correlated materials have very desirable properties such as interfacial superconductivity, ferroelectricity, ferromagnetism, and huge magnetoresistance, which make them an ideal set of candidates to integrate with semiconductor materials as device dimensions approach the atomic scale. These materials achieve their superb properties via electron-electron and electron-lattice interactions and have the potential to find military applications in the fields of supercomputing, memory, imaging and energy generation. However, since the physical, electrical and chemical phenomena underlying the operation of such materials occur at the nanoscale level, they require spatially and temporally resolved localized studies. Thus, the continued development of novel devices and materials geared toward such military oriented applications must involve extensive probing and characterization. The proposed nanomachine technology leverages powerful nano-electro-mechanical capabilities to perform scanning probe lithography, imaging, and testing of thin film materials and semiconductor devices. Research project objectives include synthesis of atomically precise strongly correlated thin films, fabrication of a nanomachine probe, and assembly of a nanomachine probe station. The outcome of this project would result in the fabrication and characterization of next generation memory devices.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government