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Metrology of Thin Films on Sapphire Substrate

Award Information
Agency: Department of Defense
Branch: Defense Microelectronics Activity
Contract: HQ072719C0001
Agency Tracking Number: 18-8K1
Amount: $999,852.55
Phase: Phase II
Program: STTR
Solicitation Topic Code: DMEA16B-001
Solicitation Number: 16.B
Solicitation Year: 2016
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-02-02
Award End Date (Contract End Date): 2021-02-01
Small Business Information
15 Presidential Way
Woburn, MA 01801
United States
DUNS: 080115461
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jung Yoon
 Vice President of Research
 (781) 465-2660
Business Contact
 Jeanne Hladky
Phone: (781) 243-3792
Research Institution
 MIT Lincoln Laboratory
 Julie Labedz Julie Labedz
244 Wood Street
Lexington, MA 02421
United States

 (781) 981-7806
 Federally Funded R&D Center (FFRDC)

There is a lack of a non-destructive metrology tool to measure the thickness of thin films on sapphire substrates due to the transparency of the substrate. Leveraging our extensive experience building sensor systems combined with MIT Lincoln Laboratory’s expertise in theoretical modeling, we will design and build an innovative thin film measurement tool using Raman spectroscopy. Our metrology system will provide the thickness measurement of thin films, such as epitaxial silicon, silicon oxide, silicon nitride, polycrystalline silicon, and amorphous silicon, deposited on sapphire substrates with an accuracy greater than 90%. Use of our metrology system will lead to better process control over the fabrication of integrated circuits on Silicon-On-Sapphire (SOS) wafers and higher process yields.

* Information listed above is at the time of submission. *

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