Metrology of Thin Films on Sapphire Substrate

There is a lack of a non-destructive metrology tool to measure the thickness of thin films on sapphire substrates due to the transparency of the substrate. Leveraging our extensive experience building sensor systems combined with MIT Lincoln Laboratory’s expertise in theoretical modeling, we will design and build an innovative thin film measurement tool using Raman spectroscopy. Our metrology system will provide the thickness measurement of thin films, such as epitaxial silicon, silicon oxide, silicon nitride, polycrystalline silicon, and amorphous silicon, deposited on sapphire substrates with an accuracy greater than 90%. Use of our metrology system will lead to better process control over the fabrication of integrated circuits on Silicon-On-Sapphire (SOS) wafers and higher process yields.