You are here

Power Electronics Thermal Interface (PETI) with Conductive Diamond Plating

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8649-19-P-A037
Agency Tracking Number: F19B-001-0101
Amount: $24,974.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: AF19B-T001
Solicitation Number: 19.B
Solicitation Year: 2019
Award Year: 2019
Award Start Date (Proposal Award Date): 2019-08-02
Award End Date (Contract End Date): 2019-11-08
Small Business Information
4182 Center Park Drive
Colorado Springs, CO 80916
United States
DUNS: 801926549
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Erick Spory
 President/CTO Global Circuit Innovations
 (719) 649-0947
Business Contact
 Diana Gault
Phone: (719) 573-6777
Research Institution
 Universit of Colorado, Colorado Springs
 Gwen Gennaro Gwen Gennaro
1420 Austin Bluffs Parkway
Colorado Springs, CO 80918
United States

 (719) 255-3153
 Nonprofit College or University

A growing number of electronic applications within the Air Force, such as devices for power conditioning and distribution, RF power amplification, and high power lasers have been identified for increased heat transfer requirements to maintain operational temperatures at acceptable levels while increasing the performance through higher power. However, this same target research that requires increased heat transfer must also produce minimal coefficient of thermal expansion (CTE) variations of the inevitable dissimilar die attach interface materials used in the process. Proposed target heat transfer capabilities are consistent with the following proposed goals: 1.) 30-70 W/(m-k), or 0.3-0.7 W/(m-K), with no delamination for 500 temp cycles from -20 degree C to +250 degree C, 2.) Laboratory demonstration of proposed die attach and heat spreader materials/processes, 3.) Similar form and fit interface materials and processes for devices consistent with various power devices and conventional heat transfer substrates – target CTE mismatches as low as possible between silicon/oxides (3 – 6 ppm/°C) and metal substrates (15 – 30 ppm/°C), 4.) Since diamond is the highest heat conducting material available, and also possesses one of the lowest CTE variations over temperature, incorporating diamond into a die attach and heat spreader process is the ultimate goal.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government