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Investigation of Radiation Effects in Advanced Microelectronic Devices for developing predictive models of degradation

Award Information
Agency: Department of Defense
Branch: Defense Microelectronics Activity
Contract: HQ072720P0041
Agency Tracking Number: 20-0J9
Amount: $167,480.51
Phase: Phase I
Program: STTR
Solicitation Topic Code: 20A-001
Solicitation Number: 20.A
Solicitation Year: 2020
Award Year: 2020
Award Start Date (Proposal Award Date): 2020-09-04
Award End Date (Contract End Date): 2021-03-18
Small Business Information
701 McMillian Way NW Suite D
Huntsville, AL 35806-2923
United States
DUNS: 185169620
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Partha Chakraborty
 (256) 726-4800
Business Contact
 Evan Richardson
Phone: (256) 361-0801
Research Institution
 Arizona State Univeristy
 Heather Clark
Tempe, AZ 85281-0002
United States

 (480) 727-4625
 Nonprofit College or University

Radiation effects in microelectronic components are a significant concern for the reliability of DoD systems that operate at high altitudes or in outer space. Typical characterization efforts focus on macroscale degradation signatures from electrical measurements at device terminals. However, a comprehensive analysis of radiation-induced physical defects is not possible based solely on terminal measurements. CFD Research Corporation and Arizona State University propose a predictive modeling effort to complement a detailed experimental approach to address this challenge. We will perform detailed physics-based modeling of the radiation response of a selected semiconductor device, and use it with the electrical characterization data to guide Transmission Electron Microscopy-based nanoscale material characterization. We will utilize the device simulation and measurement data to develop Artificial Intelligence/Machine Learning-based predictive models for quantitative correlation of the nanoscale material properties with macroscale electrical properties. In Phase I, we will perform a feasibility study based on electrical and material characterization of a simple device structure and relevant radiation effect, while using the data to develop behavioral models for the radiation effects. In Phase II, we will further develop and demonstrate the predictive model using additional device structures, material systems, and radiation effects.

* Information listed above is at the time of submission. *

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