Low Temperature Atomic Layer Deposition of Manganese Telluride on Topological Insulator

Planar heterojunction comprised of topological insulator and magnetic insulator layers provide a unique opportunity to develop highly energy efficient electronics. The key challenge for the heterojunction is to fabricate a clean and abrupt interface between the two layers for efficient magnetic coupling. The growth of the magnetic materials should ideally be a low-temperature process in order to preserve the pristine surface conditions of the topological insulator. We propose to explore layer-by-layer deposition of magnetic material at temperature below 300 C on topological insulators. The fabricated heterojunctions shall be evaluated to confirm the magnetic order of the magnetic material by variable-temperature hall measurements.