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Optimized Substrate Orientation for 4H-SiC Epitaxy

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8649-20-P-0348
Agency Tracking Number: F19B-015-0186
Amount: $150,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: AF19B-T015
Solicitation Number: 19.B
Solicitation Year: 2019
Award Year: 2020
Award Start Date (Proposal Award Date): 2019-12-12
Award End Date (Contract End Date): 2020-12-12
Small Business Information
200 Yellow Place Pines Industrial Center
Rockledge, FL 32955
United States
DUNS: 175302579
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Justin Hill
 Senior Engineer
 (321) 631-3550
Business Contact
 Dr. Robert P. Scaringe
Phone: (321) 631-3550
Research Institution
 Pennsylvania State University
 David Snyder David Snyder
State College
State College, PA 16801
United States

 (814) 865-9381
 Nonprofit College or University

SiC devices are limited in application due to high substrate manufacturing costs. High temperatures are required to make high quality 4H-SiC substrates, limiting throughput and imposing large maintenance costs on equipment. Lowering the process temperature will make SiC devices more economical, but difficulties with maintaining useful growth rates remain; altering CVD gas precursor chemistry alone has proved insufficient to meet the rate requirement. Substrate surface conditions in 4H-SiC have long been paramount to eliminating defects in epitaxial layers. Miscut off the [0001] surface axis is 4° in commercial production, although this was determined in an empirical trial-and-error approach; a systematic study of miscut and orientation has not been performed. Phase I will determine ideal substrate orientation for maximizing growth rate while maintaining film quality, while Phase II will scale the process for increased growth rate and larger substrates. Phase III will transition the technology to full scale production.

* Information listed above is at the time of submission. *

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