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Integrated ultra-high performance electro-optic modulators

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8649-20-C-0336
Agency Tracking Number: F18A-003-0149
Amount: $749,995.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: AF18A-T003
Solicitation Number: 18.A
Solicitation Year: 2018
Award Year: 2020
Award Start Date (Proposal Award Date): 2020-09-17
Award End Date (Contract End Date): 2022-09-17
Small Business Information
United States
DUNS: 609463302
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Vincent Stenger
 Director R&D
 (614) 799-0664
Business Contact
 Sri Sriram
Phone: (614) 799-0664
Research Institution
 The Ohio State University
 Mr. Shu-Wen Tsai Mr. Shu-Wen Tsai
Research Administration Building 1960 Kenny Road
Columbus, OH 43210
United States

 (614) 292-7571
 Nonprofit College or University

This proposed project combines advanced thin film materials engineering technology with state of the art photonic integrated circuit device concepts to develop next generation integrated electro-optic modulator devices. The proposed high speed thin film electro-optic modulator technology fills a critical need for compact, low voltage, and high analog bandwidth linear electro-optic modulators in silicon and InP photonic platforms. The proposed devices can meet this need by virtue of a large intrinsic electro-optic coefficient. With the proposed technology, it will be possible to achieve 1 V switch voltage and electro-optic bandwidth > 60 GHz in a device that is on order of a few hundred microns in length. This device size makes the proposed technology ideal for high density multichannel integration with electronics and optoelectronic functions under programs such as AIM Photonics. Wafer scalability and foundry compatibility of the electro-optic material production and device fabrication processes will be addressed. An integrated 16-QAM modulator chip will be designed and built. Integration of the proposed technology with silicon and InP photonics could advance performance in high speed coherent optical communications networks, RF over fiber optical interconnects, and any application where compact, very low drive voltage and high RF electro-optic bandwidth is required.

* Information listed above is at the time of submission. *

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