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High Linearity RF Amplifiers from Carbon Nanotubes

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-19-P-0029
Agency Tracking Number: A18B-004-0158
Amount: $149,999.12
Phase: Phase I
Program: STTR
Solicitation Topic Code: A18B-T004
Solicitation Number: 18.B
Timeline
Solicitation Year: 2018
Award Year: 2019
Award Start Date (Proposal Award Date): 2018-12-25
Award End Date (Contract End Date): 2019-07-01
Small Business Information
232 Trafalgar Lane
San Clemente, CA 92672
United States
DUNS: 079437491
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dawei Wang
 Chief Technology Office
 (949) 233-2093
 Dawei.Wang@carbontekinc.com
Business Contact
 Mark Chapman
Phone: (949) 632-4960
Email: mark.chapman@carbontekinc.com
Research Institution
 Duke University
 Keith Hurka-Owen Keith Hurka-Owen
 
2200 W. Main St Ste. 710
Durham, NC 27705
United States

 (919) 684-3030
 Nonprofit college or university
Abstract

The Key to further improving the data rate in data communication while minimizing the power consumption is to improve the linearity of a power amplifiers in the system. Carbon Nanotube (CNT) offer intrinsically linear behavior, but to realize advanced linearity in a practical device requires high quality CNT material, and a fabrication process that can take the full advantage of the superior properties of CNTs. Carbon Technology, Inc has already made significant progress in CNT material synthesis and device fabrication process development suitable for such amplifiers. In this project, CNT transistors will be fabricated using high quality, semiconductor enriched, CVD grown material using a new fabrication process developed specifically to optimize linearity. The dielectric layer in FETs is critical in realizing the superior linearity possible from CNT devices where the doping profile is critical for the performance. The Company will expand upon techniques pioneered by Prof. Franklin's group at Duke where carefully controlled dielectric film deposition is used to engineer the specific Schottky barrier height needed to deliver linear operation. The goal of this project is to demonstrate CNT transistors with higher linearity than any existing technology while developing a process which can be readily adapted for volume manufacturing.

* Information listed above is at the time of submission. *

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