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Carbon Nanotube Based Monolithic Millimeter-wave Integrated Circuits

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-19-P-0026
Agency Tracking Number: A18B-004-0228
Amount: $149,999.35
Phase: Phase I
Program: STTR
Solicitation Topic Code: A18B-T004
Solicitation Number: 18.B
Solicitation Year: 2018
Award Year: 2019
Award Start Date (Proposal Award Date): 2018-12-14
Award End Date (Contract End Date): 2019-06-16
Small Business Information
440 Hindry Avenue E
Inglewood, CA 90301
United States
DUNS: 069087340
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dwight C Streit
 (310) 825-7011
Business Contact
 Huaping Li
Phone: (310) 641-1338
Research Institution
 University of California Los Angeles
 Dwight C. Streit Dwight C. Streit
410 Westwood Plaza Engineering V, Room 2127
Los Angeles, CA 90095
United States

 (310) 825-7011
 Nonprofit College or University

In this project, we propose to develop a high-performance carbon nanotube (CNT) based millimeter-wave transistor technology and demonstrate monolithic millimeter-wave integrated circuits (MMICs) based on this technology with improved power efficiency, linearity, noise and dynamic range performance over existing GaAs, SiGe and RF-CMOS technologies. The goal of this topic is to leverage Professor Streit’s GaN RF fabrication experiences and Atom’s electronically pure CNT transistor developments toward creating a high-performance CNT-based transistor technology and wafer-scale monolithic integrated circuits at millimeter-wave frequencies that can be commercialized to outperform incumbent semiconductor high frequency technologies (GaAs, SiGe, RF-CMOS) yet at much lower cost. We will develop new pathways and process flow innovations in CNT alignment & deposition, material contact and doping to create high quality CNT arrays beyond current state-of-the-art for device engineering, and establish a robust process capable of producing high performance RF transistors and be scalable to wafer size to enable fabrication of monolithic integrated circuits based on CNTs. With these efforts, we expect to achieve prototype CNT RF transistors with the following metrics: DC: ION/W >500 mA/mm, ION/IOFF > 1000; RF: fT and fmax > 50GHz, and a third-order intercept (IP3) at least 10dB higher than its 1dB compression power (P1dB).

* Information listed above is at the time of submission. *

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