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Planar, High Frequency, Power Conversion Device Technology

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-10-C-0439
Agency Tracking Number: N09A-023-0329
Amount: $1,496,500.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: N09-T023
Solicitation Number: 2009.A
Timeline
Solicitation Year: 2009
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-09-30
Award End Date (Contract End Date): 2013-12-28
Small Business Information
115 Castilian Drive
Goleta, CA -
United States
DUNS: 796991425
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Coffie
 Director, Device Engineer
 (805) 456-1305
 rcoffie@transphormusa.com
Business Contact
 Primit Parikh
Title: Chief Operating Officer
Phone: (805) 456-1307
Email: pparikh@transphormusa.com
Research Institution
 UC Santa Barbara
 Steven Denbaars
 
SSLEC Engineering 3 Building
Goleta, CA 93106-
United States

 (805) 893-8511
 Nonprofit college or university
Abstract

Transphorm proposes to demonstrate a normally off fast high voltage Gallium Nitride power switch solution. The switch would block to 1200V, have a threshold voltage greater than 5 V, and the phase 2 switch will target an on resistance less than 15 ohm-mm and current more than 1 Amp. To accomplish these targets, Transphorm will combine the design requirements of realizing a high (and positive) threshold voltage while maintaining a low total on resistance while maintain a low switching resistance. The device will target low dc to rf dispersion or achieve a dynamic on resistance which is within 2x of the static performance. The switch would ultimately be capable of switching at high frequencies (1 MHz or higher) with efficiency in excess of 97%.

* Information listed above is at the time of submission. *

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