You are here

Atomically Precise Scanning Probe Based Analysis of Activated Dopants for 2D Micro Electronics

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-SC0020827
Agency Tracking Number: 0000261273
Amount: $1,149,856.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: 06a
Solicitation Number: DE-FOA-0002381
Timeline
Solicitation Year: 2021
Award Year: 2021
Award Start Date (Proposal Award Date): 2021-08-23
Award End Date (Contract End Date): 2023-08-22
Small Business Information
1301 North Plano Rd.
Richardson, TX 75081-2426
United States
DUNS: 796537269
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 James Owen
 (214) 384-0723
 jowen@zyvexlabs.com
Business Contact
 John Randall
Phone: (214) 641-6458
Email: jrandall@zyvexlabs.com
Research Institution
 The University of Texas at Dallas
 
800 West Campbell Road
Richardson, TX 75080-3021
United States

 Nonprofit College or University
Abstract

The overall objective of this program is to improve the metrology of buried dopant structures for ultraprecise devices created using Scanning Tunnelling Microscope (STM) based lithography. During fabrication, it is necessary to determine the location of existing structures so as to align new dopant structures to them precisely. This metrology therefore needs to be done in-situ during fabrication with the same probe as used for lithography Second, for quantum devices, it is proving more important that there be the desired number of dopants in a patch, rather than that their position is atomically precise. In-situ metrology allows the possibility of error correction. This is a hallmark of Atomic Precision Advanced Manufacturing. The dopant deposition and incorporation is performed in a different chamber than the lithography. Therefore, after incorporation, we need methods to reliably and efficiently relocate the general area of the nm-scale dopant structures on a mm-size sample, determine the exact location of the dopants, and to provide as far as possible quantitative information about the dopant number and location. Thus far, in the initial Phase I program, we have used a closed-loop coarse motion system and patterned substrates to return efficiently to the same position on a sample. We have developed novel high-frequency STM-based spectroscopic methods to measure dI/dV and I- V spectra at high speed during scanning, and have successfully used these methods to create bipolar dopant structures by locating B dopant regions, and then aligning P dopant patterns to them. In Phase II, we will continue to develop these novel spectroscopic imaging methods. We will pursue two tracks: metrology of dopant patch location to support Atomically Precise device fabrication for the DOE objective of UltraPrecise Manufacturing, including our parallel STTR on fabrication of bipolar devices, DE-SC0020817; and single-pixel-scale experiments to determine the sensitivity of the novel spectroscopic methods to the number of dopants in small patches to support the fabrication of quantum devices. These metrology capabilities will be incorporated into our ultraprecise lithography tool, ZyVector, enhancing its commercial value, and improve the yield and throughput of manufactured ultraprecise dopant-based devices.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government