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SBIR Phase I:Novel Structure for Efficient and Reliable Medium Voltage Silicon Carbide (SiC) Power Devices

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 2126732
Agency Tracking Number: 2126732
Amount: $255,909.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: PM
Solicitation Number: NSF 21-562
Solicitation Year: 2021
Award Year: 2022
Award Start Date (Proposal Award Date): 2021-11-15
Award End Date (Contract End Date): 2023-04-30
Small Business Information
United States
DUNS: 117531895
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Adam Morgan
 (518) 944-3910
Business Contact
 Adam Morgan
Phone: (518) 944-3910
Research Institution

The broader impact/commercial potential of this Small Innovation Research (SBIR) Phase I project is to improve the efficiency and reliability power conversion systems (PCSs) while also reducing the complexity and cost. System builders and end-users of power electronics for PCS may benefit from proposed advancements in power semiconductor technology that are translated to cheaper and more resilient and sustainable electricity generation, distribution, and consumption. The interconnections of distributed energy resources and energy storage systems within DC (direct current) micro-grids and interfaces between DC micro-grids and legacy AC (alternating current) distribution grid networks will be made simpler, more efficient, and more reliable when the proposed power semiconductor devices become ubiquitous within future PCS.This Small Business Innovation Research (SBIR) Phase I project will improve advanced power semiconductor processing techniques. Specifically, the project focuses on: 1) developing a reliable semiconductor-based, high power electronic switch in the form of a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor), 2) optimizing the electronic switch parameters to achieve the best trade-off between efficiency and reliability, and 3) fully characterizing the electrical performance of the electronic switch. The research will involve the design of experiments to determine the optimal set of electronic switch parameters that take into account manufacturing limitations of the semiconductor processing equipment. The teams seeks to produce a functioning semiconductor-based, high power electronic switch that is capable of operating more reliably and more efficiently than what is presently available in the market.The team also seeks to enable even higher power electronic switches to be made by means of scaling the resultant SiC MOSFET technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

* Information listed above is at the time of submission. *

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