You are here

STTR Phase I:PIC: Electro-luminescence and doping of black phosphorus for printed lasers on silicon photonic chips

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 2136800
Agency Tracking Number: 2136800
Amount: $256,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: PH
Solicitation Number: NSF 21-563
Timeline
Solicitation Year: 2021
Award Year: 2022
Award Start Date (Proposal Award Date): 2021-12-01
Award End Date (Contract End Date): 2023-04-30
Small Business Information
2307 W THOMAS ST
CHICAGO, IL 60622
United States
DUNS: 081333183
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Chad Husko
 (847) 624-8810
 chusko@irislighttech.com
Business Contact
 Chad Husko
Phone: (847) 624-8810
Email: chusko@irislighttech.com
Research Institution
 Boise State University
 
1910 W University Dr NA
Boise, ID 83725
United States

 Nonprofit College or University
Abstract

The broader impact/commercial potential of this Small Business Technology Transfer (STTR) Phase I project is to demonstrate the viability of a new manufacturing process for on-chip lasers for silicon photonics using printed nanomaterial inks. The difficulty of a scalable method for fabricating on-chip, multi-color lasers is a major challenge for the silicon photonics market. Specifically, today's standard manufacturing of photonic chips does not include on-chip lasers. Without integration of laser engines to drive the circuits, the market potential of light chips is constrained by design and price. The technology developed here can allow foundries to mass produce chips with lasers and open multiple new markets for silicon photonics including wearable photonic sensors, optical data transfer, autonomous vehicle light detection and ranging, quantum information, fiber-optic gyroscopes, and healthcare applications such as immunoassay tests and medical imaging.This Small Business Technology Transfer Phase I project develops on-chip embedded lasers to enable fully functional silicon photonic chip manufacturing. Currently, the laser solutions being employed in silicon photonics include bonded lasers and heterogeneous integration. The system integrators that assemble silicon photonics modules rely on often cumbersome methods of gluing individual lasers to silicon chips, keeping costs high and throughput well below desired levels. The photonic inks developed here will overcome this challenge by enabling an in-foundry laser solution via wafer-scale additive manufacturing. The photonic ink emits broad-spectrum light covering the visible to the near-infrared range and can be tailored to emit at specific wavelength bands relevant to different markets by altering the number of atomic layers. The goals of this Phase I project are to demonstrate electroluminescence from a p-n junction made from doped, few-layer nanomaterials.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

* Information listed above is at the time of submission. *

US Flag An Official Website of the United States Government