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Low Cost Imaging In The mm Wave Region Using Plasma Waves in High Mobility Transistor

Award Information
Agency: Department of Defense
Branch: Office for Chemical and Biological Defense
Contract: W911SR-23-C-0010
Agency Tracking Number: C22B-T001-0003
Amount: $182,882.94
Phase: Phase I
Program: STTR
Solicitation Topic Code: CBD22B-T001
Solicitation Number: 22.B
Timeline
Solicitation Year: 2022
Award Year: 2023
Award Start Date (Proposal Award Date): 2023-07-05
Award End Date (Contract End Date): 2024-01-08
Small Business Information
P.O. Box 616 19 Loveton Circle
Sparks, MD 21152-1111
United States
DUNS: 808275890
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Feng Jin
 (410) 472-7070
 fjin@brimrose.com
Business Contact
 Diane Murray
Phone: (936) 588-6901
Email: dmurray@brimrosetechnology.com
Research Institution
 University of Maryland Baltimore County
 Cameron McAdams
 
ECS 329, 1000 Hilltop Circle
Baltimore, MD 21250-0000
United States

 (410) 455-3187
 Nonprofit College or University
Abstract

In this work, we propose to develop low-cost, high sensitivity high electron mobility transistor-based W-band millimeter wave focal plane array/camera based on mature ternary III-V epitaxial materials of InAlAs on top of InP substrate. The plasma-wave detector uses well established mature technology of high electron mobility transistors which allows future integration and reduces cost. The detectors are uncooled since no drain-source voltage is applied, hence there is no dark current present, promoting low power operation.

* Information listed above is at the time of submission. *

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