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Atomic fusion wafer bonding tool for ultra-high power switches

Award Information
Agency: Department of Defense
Branch: Office of the Secretary of Defense
Contract: W911NF-23-P-0009
Agency Tracking Number: O22B-004-0002
Amount: $249,491.97
Phase: Phase I
Program: STTR
Solicitation Topic Code: OSD22B-004
Solicitation Number: 22.B
Timeline
Solicitation Year: 2022
Award Year: 2023
Award Start Date (Proposal Award Date): 2023-01-16
Award End Date (Contract End Date): 2024-01-15
Small Business Information
1487 Poinsettia Ave Suite 119
Vista, CA 92081-1111
United States
DUNS: 078674374
HUBZone Owned: Yes
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Payam Rabiei
 (760) 536-3116
 pr@partow-tech.com
Business Contact
 Payam Rabiei
Phone: (760) 536-3116
Email: pr@partow-tech.com
Research Institution
 UCLA Samueli School of Engineering
 Mark Mark Goorsky
 
7400 Boelter Hall, Samueli School of Engineering
Los Angeles, CA 90095-1600
United States

 (310) 206-0267
 Nonprofit College or University
Abstract

Ultra-Wide bandgap materials such as GaN and Ga2O3 are emerging as preferred materials in high power applications due to their high breakdown field. The thermal dissipation is poor in both those materials due to low thermal conductivity. A high thermal conductivity material such as SiC is used as a growing substrate, however, the thermal conductivity is still limited due to defects in the interface of grown area. Direct bonding of GaN or Ga2O3 to SiC can resolve the thermal barrier resistance problem. Here, we propose a heterogeneous surface activated atomic diffusion bonding system to bond those materials to SiC. The thermal, mechanical, electrical, and optical behavior of the bond interface will be characterized. In addition, structural and chemical properties of bond interface will be characterized using TEM, EDX and XRD. Improving thermal barrier resistance in the interfacial area of the bonded wafers will lead to higher efficiency and improved power electronic systems needed by Navy and DoD.

* Information listed above is at the time of submission. *

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