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The Characterization and Mitigation of Single Event Effects in Ultra-Deep Submicron (< 90nm) Microelectronics

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-08-C-0065
Agency Tracking Number: T071-005-0126
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: DTRA07-005
Solicitation Number: 2007.1
Solicitation Year: 2007
Award Year: 2008
Award Start Date (Proposal Award Date): 2008-09-09
Award End Date (Contract End Date): 2010-09-08
Small Business Information
18378 Redmond Fall City Road
Redmond, WA 98052
United States
DUNS: 010947088
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Yuan Cai
 Member of Technical Staff
 (425) 702-9196
Business Contact
 Tracey Luo
Title: President
Phone: (425) 702-9196
Research Institution

Orora Design Technologies proposes to develop electronic design automation (EDA) tools employing minimally invasive circuit design-based methods to mitigate single event effects (SEEs) for next generation Ultra-DSM CMOS (<90nm) space electronics. Robust circuit modeling, simulation and optimization tools will be developed to allow circuit designers to quickly identify sensitive SEE circuitry, characterize the SEE sensitivity, and automatically insert the minimally invasive SEE mitigation into complex circuit designs, and then optimize the performance of an ultra-DSM circuit while meeting the radiation-hardness requirements with the minimal area and performance overhead. The SEE design-based mitigation EDA tool, as well as enabling modeling, simulation and optimization tools, will be integrated into industry standard design environments with automated design flows. The proposed tool development will be driven by, and validated against, several 90nm and below real circuits from a collaborative project with Boeing Solid-State Electronics Development for satellite systems.

* Information listed above is at the time of submission. *

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