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Improved SiC Materials for High Power Electronics

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00014-01-M-0230
Agency Tracking Number: 01-0009T
Amount: $64,770.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2001
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
20 Patterson Brook Road, PO Box 550
Wareham, MA 02576
United States
DUNS: 130322741
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Brian Dixon
 (508) 291-4375
Business Contact
 R. Scott Morris
Title: Vice President
Phone: (508) 291-4375
Research Institution
 Charles Eddy
Dept of EE, 8 St. Mary's St.
Boston, MA 02110
United States

 (617) 353-8883
 Nonprofit College or University

Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts to be realized with acceptable manufacturing yields. [2,3] We will demonstrate the feasibility of a novelSiC device using our proprietary method to render micropipes electrically inactive and also to use the method of Cole, et. al. [4] to fabricate Ohmic contacts which will attain reproducible low specific contact resistance.REFERENCES:1. Chow, T., Mat. Res. Soc. Symp., V622, 2000.2. Tsvetkov, V. ,et. al., Silicon Carbide, III-Nitrides, and Related Materials, Materials Science Forum, 264-268, Trans Tech, pp 3-8,1998.3. Neudeck, P., et. al., J., Mat. Res. Soc. Symp., v622, 2000.4. Cole, M., et. al., Mat. Res. Soc. Symp., V622, 2000.With Phoexix Innovation's ability to create useful devices on current material we believe that there are numerous commercial and military markets for this technology.

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