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Commercial Methods for Production of Orientation Patterned GaAs

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-06-C-0053
Agency Tracking Number: F064-010-0311
Amount: $99,994.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: AF06-T010
Solicitation Number: N/A
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-08-01
Award End Date (Contract End Date): 2007-05-01
Small Business Information
20 New England Business Center
Andover, MA 01810
United States
DUNS: 073800062
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 David Fenner
 Principal Research Scientist
 (978) 689-0003
Business Contact
 B. Green
Title: President of R&D Operations
Phone: (978) 689-0003
Research Institution
 Hongwei Sun
UML Photonics Center
Lowell, MA 01854
United States

 (978) 934-4742
 Nonprofit College or University

The Air Force desires development of a commercial production source for nonlinear optical (NLO) gallium arsenide semiconductor crystals with orientation patterning, i.e., OP-GaAs. The need for these materials is driven primarily by applications for NLO laser frequency converters in Infrared Counter Measures (IRCM). The proposed Phase I project will demonstrate feasibility for a fabrication method of OP-GaAs crystals that exclusively utilizes processes available from commercial vendors and at PSI. Molecular beam epitaxy, wafer bonding and hydride vapor phase epitaxy (HVPE) will be employed. Development of fabrication steps for the first two of these will be done with assistance by the University of Massachusetts, Lowell. Phase I will fabricate templates, thick films, characterize the OP-GaAs and design the commercial production flow. The proposed overall program goals for the end of Phase II are to bring on-line a new OP-GaAs production foundry based on a sequence of vendors and in-house fabrications at PSI. Production volume of QPM devices of OP-GaAs in the year following Phase II will reach 30-40 units/year.

* Information listed above is at the time of submission. *

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