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Quantum Epitaxial Designs,

Company Information
Address
119 Technology Drive
Bethlehem, PA 18015
United States



Information

UEI: N/A

# of Employees: 50


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Carbon Doped HBT Development for Power Applications

    Amount: $60,000.00

    N/A

    SBIRPhase I1994Department of Defense Air Force
  2. OPTIMIZATION OF INGAAS/INALAS/INP EOIC STRUCTURES: AN MBE MATERIAL PARAMETER STUDY

    Amount: $509,000.00

    PHASE I OF THIS PROGRAM WILL OPTIMIZE THE GROWTH OF LATTICE MATCHED INGAAS/INALAS ON INP FOR EOIC APPLICATIONS THROUGH THE USE ON INNOVATIVE MOLECULAR BEAM EPITAXIAL (MBE) GROWTH AND CALIBRATION PROCE ...

    SBIRPhase II1993Department of Defense Air Force
  3. OPTIMIZATION OF INGAAS/INALAS/INP EOIC STRUCTURES: AN MBE MATERIAL PARAMETER STUDY

    Amount: $49,926.00

    N/A

    SBIRPhase I1992Department of Defense Air Force
  4. PLANAR DOPED PSEUDOMORPHIC HIGH ELECTRONIC MOBILITY TRANSISTOR DEVELOPMENT

    Amount: $55,107.00

    THE MOST PROMISING MATERIAL SYSTEM TO MEET THE PERFORMANCE CRITERIA FOR LOW NOISE AND POWER DEVICES OPERATING AT MILLIMETERWAVE FREQUENCIES IS THE PLANAR DOPED PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRA ...

    SBIRPhase I1991Department of Defense Missile Defense Agency
  5. ULTRASTRUCTURED MATERIALS

    Amount: $55,926.00

    THE MOST PROMISING CANDIDATE FOR THE NEXT GENERATION, HIGH SPEED ELECTRONIC DEVICES IS THE PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT). DEVICES BASED ON PHEMT TECHNOLOGY HAVE DEMONSTRATED ...

    SBIRPhase I1989Department of Defense Air Force
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