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PE-MOCVD FERROELECTRIC NONVOLATILE RADIATION-HARD MEMORIES

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N/A
Agency Tracking Number: 12878
Amount: $50,415.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1990
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
1009 Bradbury Se
Albuquerque, NM 87106
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Jeff A Bullington
 (505) 345-8668
Business Contact
Phone: () -
Research Institution
N/A
Abstract

FERROELECTRIC MATERIALS HAVE BEEN SUCCESSFULLY INTEGRATED WITH BOTH CMOS AND GAAS SEMICONDUCTOR TECHNOLOGIES TO CREATE NONVOLATILE MEMORIES. FERROELECTRIC MATERIALS HAVE ALSO DEMONSTRATED IMMUNITY TO RADIATION DAMAGE AND ARE CURRENTLY BEING DEVELOPED ON TWO SEPARATE GOVERNMENT EFFORTS FOR STRATEGIC LEVEL SYSTEMS. HOWEVER, THE COMPLEX METAL OXIDE CERAMIC BEING USED IN THESE COMMERCIAL AND MILITARY DEVELOPMENT PROGRAMS HAS SEVERAL DISTINCT ISSUES WHICH AFFECT PERFORMANCE. THESE ISSUES INCLUDE PURITY, STRAIN INDUCED CLAMPING, AND HIGH PROCESS TEMPERATURES. THIS PROPOSAL WILL DEVELOP A PLASMA ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITION (PE-MOCVD) PROCESS WHICH WILL ATTACK THE ISSUES LISTED AND RESULT IN HIGHER QUALITY FILMS.

* Information listed above is at the time of submission. *

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