You are here
Scalable technology for growth of high quality single crystal gallium nitride
Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-10-C-0114
Agency Tracking Number: F08B-T20-0137
Amount:
$750,000.00
Phase:
Phase II
Program:
STTR
Solicitation Topic Code:
AF08-BT20
Solicitation Number:
2008.B
Timeline
Solicitation Year:
2008
Award Year:
2010
Award Start Date (Proposal Award Date):
2010-05-03
Award End Date (Contract End Date):
2012-05-03
Small Business Information
485 Pine Ave
Goleta, CA
93117-3709
United States
DUNS:
809425742
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Mark D''Evelyn
Title: Vice President, Bulk Technology
Phone: (805) 683-1800
Email: mdevelyn@soraa.com
Title: Vice President, Bulk Technology
Phone: (805) 683-1800
Email: mdevelyn@soraa.com
Business Contact
Name: Richard Craig
Title: General Manager
Phone: (805) 696-6999
Email: rcraig@soraa.com
Title: General Manager
Phone: (805) 696-6999
Email: rcraig@soraa.com
Research Institution
Name: The University of Akron
Contact: Peggy Kraft
Address:
Phone: (330) 972-6459
Type: Nonprofit College or University
Contact: Peggy Kraft
Address:
302 Buchtel Common
Akron, OH
44325-
United States
Phone: (330) 972-6459
Type: Nonprofit College or University
Abstract
We propose to demonstrate and advance several key aspects of our novel, scalable ammonothermal technology for growth of high quality single crystal gallium nitride. Specifically, we propose to demonstrate a high growth rate and high crystalline quality, to design and analyze a pilot-scale reactor, and to construct and validate a quantitative model to describe the fluid dynamics of the growth environment. BENEFIT: Advance bulk GaN crystal growth technology to the threshold for commercialization. Bulk GaN is an enabling technology for a range of device applications, including light emitters, photodetectors, and high performance electronics.
* Information listed above is at the time of submission. *
